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Low Loss Tungsten-Based Electrode Technology for Microwave Frequency BST Varactors

Authors:	Email author" target="_blank">J-P?Maria Email author B?A?Boyette A?I?Kingon C?Ragaglia G?Stauf

Affiliation:	(1) Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu, 300, Taiwan, R.O.C.;(2) Innovation Packaging Research Center, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu, 300, Taiwan, R.O.C.

Abstract:	The electrical properties of BaO-Nd₂O₃-Sm₂O₃-TiO₂ ceramics doped with low loss glass or low melting point oxide B₂O₃ are evaluated by impedance spectroscopy. Glass or B₂O₃ is doped as liquid phase sintering aid. Doping of glass/B₂O₃ enhances both the growth in the longitudinal direction of the columnar crystal and the preferred orientation of (002). The grain size increases and grain boundary decreases with the increase of dopant. Both the grain and grain-boundary resistivities decrease with the increase of dopant. The grain boundary activation energy for charge transport is larger than that of the grain activation energy. Possible mechanisms for the electrical behavior of the liquid-phase sintered BaO-Nd₂O₃-Sm₂O₃-TiO₂ ceramics are proposed and discussed.

Keywords:	impedance spectroscopy microwave dielectric electrical properties liquid phase sintering sintering aid
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