L频段宽带GaN芯片高功率放大器设计

针对当前无线通信系统中射频功率放大器工作带宽窄、输出功率和附加效率低的缺点，本文基于 CREE 公司的 GaN 功率管设计了一款新型的 L 频段宽带大功率射频功率放大器。用源牵引和负载牵引技术测得工作频段内最佳输入输出阻抗，再通过集总参数元件与微带线结合的方法设计宽带匹配网络，并对放大器功率、效率以及谐波分量等指标进行测试。测试数据表明，当放大器工作在 L 频段300 MHz 带宽内(相对工作带宽为27.7%)，输入功率为34 dBm的连续波(CW)时，其输出功率可达50.4 dBm(108 W)，附加效率不低于48%，平坦度为±0.1 dB。因此，本文设计的 GaN 射频宽带功率放大器具有带宽宽、效率高、功率大的特点，具备应用价值。

Design of broadband amplifier with GaN power device in L band

In order to solve the problem of narrow working band and low output power and power-added efficiency in current wireless communication system,this paper proposes a new type of the broadband high power amplifier in L Band designed by GaN device made by CREE.A method based on source-pull/load-pull simulation has been used to find optimum source and load impedances .Then using an approach of mixing of microstrip line and capacitor,wideband matching networks is designed.Large-signal measurement results show that when the input power is 34 dBm among the band of 300 MHz in the L-band (relative operating bandwidth is 27.7%),the output power is higher than 50.4 dBm (108 W),the power-added efficiency (PAE)is over 48% and the plainness is ± 0.1 dB at the whole working band.The data indicates that the power amplifier based on GaN has the advantages of wide band,high efficiency and output power.