| 半导体设备保护用熔断体的直流短路分断能力 |
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| 引用本文： | 章克强.半导体设备保护用熔断体的直流短路分断能力[J].低压电器,2007(19):54-56. |
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| 作者姓名： | 章克强 |
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| 作者单位： | 国家低压电器质量监督检验中心,上海,200063 |
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| 摘 要： | 介绍了直流快速熔断体的短路分断试验项目及试验方法,分析了直流快速熔断体的I2t特性、最大电弧能量特性,指出直流快速熔断体可为半导体器件提供有效保护。
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| 关 键 词： | 半导体设备 熔断体 I2t特性 最大电弧能量 |
| 文章编号： | 1001-5531(2007)19-0054-03 |
| 修稿时间： | 2007年6月4日 |
DC Short-Circuit Breaking Ability of Fuse-Link for Semiconductor Device Protection |
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| ZHANG Keqiang.DC Short-Circuit Breaking Ability of Fuse-Link for Semiconductor Device Protection[J].Low Voltage Apparatus,2007(19):54-56. |
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| Authors: | ZHANG Keqiang |
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| Abstract: | The DC short-circuit breaking and verification methods for fuse-link for the protection of semiconductor device were introduced.The I~2t characteristic and max electrical arc energy characteristic of fuse-link for the protection of semiconductor device were analyzed.It is suggested that DC fast fuse-link can protect semiconductor devices efficiently. |
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| Keywords: | semiconductor device fuse-link I~2t characteristic max electric arc energy |
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