| 1200V碳化硅MOSFET与硅IGBT器件特性对比性研究 |
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| 引用本文： | 李磊,宁圃奇,温旭辉,张栋.1200V碳化硅MOSFET与硅IGBT器件特性对比性研究[J].电源学报,2016,14(4):32-38,58. |
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| 作者姓名： | 李磊 宁圃奇 温旭辉 张栋 |
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| 作者单位： | 北京电动车辆协同创新中心, 北京 100081;中国科学院电工研究所, 北京 100190;中国科学院电力电子与电气驱动重点实验室(电工研究所), 北京 100049;北京电动车辆协同创新中心, 北京 100081;中国科学院电工研究所, 北京 100190;中国科学院电力电子与电气驱动重点实验室(电工研究所), 北京 100049;北京电动车辆协同创新中心, 北京 100081;中国科学院电工研究所, 北京 100190;中国科学院电力电子与电气驱动重点实验室(电工研究所), 北京 100049;北京电动车辆协同创新中心, 北京 100081;中国科学院电工研究所, 北京 100190;中国科学院电力电子与电气驱动重点实验室(电工研究所), 北京 100049 |
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| 基金项目： | 国家自然科学基金青年基金资助项目（51507166）； 国家高技术研究发展计划资助项目（863）（2015AA034501） |
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| 摘 要： | 搭建了输出特性测试电路、漏电流测试电路、双脉冲测试电路和Buck电路,对1 200 V SiC MOSFET和Si IGBT的输出特性、漏电流、开关特性和器件损耗进行了对比研究,分析了SiC MOSFET的主要优缺点。分析结果表明,SiC MOSFET在高温条件下依然拥有稳定的阻断能力;在同样的工作条件下,SiC MOSFET损耗更小,适合在高频率、大功率场合下使用;SiC MOSFET的跨导低,导通电阻大,所以门极驱动电压需要比较大的摆幅(-5/+20 V);由于开关速度很快,SiC MOSFET对线路杂散参数更加敏感。
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| 关 键 词： | 碳化硅 输出特性 漏电流 双脉冲测试 Buck电路 |
| 收稿时间： | 2016/4/29 0:00:00 |
| 修稿时间： | 2016/7/11 0:00:00 |
Comparative Performance Study of 1 200 V SiC MOSFET and Si IGBT |
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| LI Lei,NING Puqi,WEN Xuhui and ZHANG Dong.Comparative Performance Study of 1 200 V SiC MOSFET and Si IGBT[J].Journal of power supply,2016,14(4):32-38,58. |
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| Authors: | LI Lei NING Puqi WEN Xuhui and ZHANG Dong |
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| Affiliation: | Beijing Collaborative Innovation Center for Electric Vehicles, Beijing 100081, China;Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100049, China;Beijing Collaborative Innovation Center for Electric Vehicles, Beijing 100081, China;Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100049, China;Beijing Collaborative Innovation Center for Electric Vehicles, Beijing 100081, China;Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100049, China;Beijing Collaborative Innovation Center for Electric Vehicles, Beijing 100081, China;Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | The output characteristic test circuit, leakage current test circuit, double pulse test circuit and Buck converter are set up to study the performance of 1 200 V SiC MOSFET and 1 200 V Si IGBT comparatively. The advantages and disadvantages of SiC MOSFET are analyzed. The analyzed result shows that SiC MOSFET has stable blocking capability at high junction temperature. With its inherently low switching loss, SiC MOSFET is suitable for the high power and high frequency applications. However, considering the modest transconductance and high on-state resistance, SiC MOSFET need to be driven with a higher gate voltage swing(-5~+20 V). SiC MOSFET is sensitive to the parasitic parameters because of fast switching speed. |
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| Keywords: | silicon carbide output characterization leakage current double pulse test Buck converter |
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