| SiC MOSFET驱动电路及实验分析 |
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| 引用本文： | 张旭,陈敏,徐德鸿.SiC MOSFET驱动电路及实验分析[J].电源学报,2013,11(3):71-76. |
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| 作者姓名： | 张旭 陈敏 徐德鸿 |
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| 作者单位： | 浙江大学电气工程学院,浙江大学电气工程学院,浙江大学电气工程学院 |
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| 摘 要： | 根据SiC MOSFET开关特性,设计了一种SiC MOSFET的驱动电路,在此基础上采用双脉冲测试方法,对SiC MOSFET的开关时间、开关损耗等进行了实验测量,分析了不同驱动电阻对SiC MOSFET开关时间、开关损耗等的影响。
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| 关 键 词： | SiC MOSFET 驱动电路 开关时间 开关损耗 |
| 收稿时间： | 2/2/2013 12:00:00 AM |
| 修稿时间： | 2013/2/25 0:00:00 |
SiC MOSFET Driver and Experiment Analysis |
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| ZHANG Xu,CHEN Min and XU De-hong.SiC MOSFET Driver and Experiment Analysis[J].Journal of power supply,2013,11(3):71-76. |
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| Authors: | ZHANG Xu CHEN Min and XU De-hong |
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| Affiliation: | College of Electrical Engineering, Zhejiang University,College of Electrical Engineering, Zhejiang University,College of Electrical Engineering, Zhejiang University |
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| Abstract: | One kind of driver circuit for SiC MOSFET was discussed according to the switching characteristics of SiC MOSFET.Based on the double pulse test circuit,the switching time and switching loss of SiC MOSFETs were measured with different gate resistance.Then,different resistance's influence on the switching time and switching loss was analyzed. |
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| Keywords: | SiC MOSFET driver circuit switching time switching loss |
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