首页 | 本学科首页   官方微博 | 高级检索  
     

NaV1-xAlxPO4F的合成及电化学性能研究
引用本文:刘志明,王先友,唐安平,卓海涛.NaV1-xAlxPO4F的合成及电化学性能研究[J].电源技术,2007,31(6):465-468.
作者姓名:刘志明  王先友  唐安平  卓海涛
作者单位:湘潭大学,化学学院,湖南,湘潭,411105
基金项目:国家自然科学基金 , 江苏省自然科学基金 , 湖南省自然科学基金 , 湖南省自然科学基金
摘    要:运用高温固相法成功合成了钠离子电池正极材料NaV1-xAlxPO4F(x=0、0.02).通过傅里叶变换红外光谱法(FT-IR)、X射线衍射(XRD)、扫描电镜(SEM)对材料的晶体结构和形貌进行了表征,研究结果表明NaV1-xAlxPO4F为简单单斜晶型.从材料的晶体结构、恒流充放电测试和循环性能等方面分析了掺杂元素Al在改善材料性能中的作用.实验表明:掺Al后正极材料的电化学性能得到较好的改善,材料的首次放电比容量为80.4 mAh/g,效率高达89.2%,可逆比容量损失只有9.7 mAh/g.在循环30次后可逆比容量为68.3 mAh/g,可逆容量保持率为85%.

关 键 词:钠离子电池  正极材料  Al掺杂  氟磷酸盐  电化学性能
文章编号:1002-087X(2007)06-0465-04
修稿时间:2006年11月23

Study on synthesis and electrochemical performances of NaV1-xAlxPO4F
LIU Zhi-ming,WANG Xian-you,TANG An-ping,ZHUO Hai-tao.Study on synthesis and electrochemical performances of NaV1-xAlxPO4F[J].Chinese Journal of Power Sources,2007,31(6):465-468.
Authors:LIU Zhi-ming  WANG Xian-you  TANG An-ping  ZHUO Hai-tao
Abstract:Al doped NaV1-x Alx PO4F(x=0?0.02) for the application of cathode material of sodium-ion batteries was prepared by high temperature solid-phase method. The NaV1-x Alx PO4F powders were characterized by FT-IR,X-ray diffraction (XRD), and the scan electronic microscopy(SEM). The results show that the crystal system of NaV1-x Alx PO4F is monoclinic. The effects of the Al doped on improving the performances of materials were analyzed in terms of the crystal structure, charge-discharge curves and cycle performances. It's found that NaV1-x Alx PO4F shows an improved cathodic behavior and discharge capacity retention compared to the undoped sample, an initial reversible capacity of 80.4 mAh/g can be obtained, and the first charge-discharge efficiency is about 89.2%, the loss of capacities is 9.7 mAh/g, and it's also observed that the reversible capacity is 68.3 mAh/g and the reversible capacity retention of NaV0.98Al0.02PO4F is still 85 % after the 30th cycle.
Keywords:sodium-ion battery  cathode material  Al-doped  fluorophosphate compound    electrochemical performance
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号