高频正弦波电流下MOSFET和IGBT工作特性分析

从功率半导体器件MOSFET和IGBT的工作环境出发,详细分析了器件的通态电压、电流及开关时刻,得出在合适的关断电流瞬时值下,不仅能实现功率器件的ZCS,还能实现ZVS和无电压过冲换流的结论.还分析了在不合适电流值下换流时,电压过冲的产生机理,并提出了一种彻底抑制电压过冲的方法.通过测试实验室样机所用的功率器件,验证了分析的正确性和该方法的有效性.

Switching Characteristic Analysis of MOSFET and IGBT under High Frequency Sine-wave Current

Begining with the operational surrounding of power semiconductor devices,MOSFET and IGBT,the paper gives detailed analysis of on-state volatge, current and switching time, and advances if switching at a suitable instantaneous current,the devices can realize ZCS and ZVS and non-voltage-overshot during switching period.Furthermore,the paper gives the explain of why the overshot occurs if switching at ill-suited current,and presents a way to surpress voltage overshot.Testing results on the power devices which construct the prototype validate the analysis and method.