| Al/SiC肖特基势垒二极管 |
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| 引用本文： | 刘肃,宁长春,孙艳玲. Al/SiC肖特基势垒二极管[J]. 电力电子技术, 2002, 36(5): 75-77 |
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| 作者姓名： | 刘肃 宁长春 孙艳玲 |
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| 作者单位： | 兰州大学,甘肃,730000 |
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| 摘 要： | 报道了用热蒸发A1作肖特基接触在SiC材料上制作肖特基二极管的工艺过程和器件特性。采用射频溅射法在Si(111)衬底上生长SiC薄膜。I－Ⅴ特性测量说明Al/SiC SBD有较好的整流特性，热电子发射是其主要的输运机理。反向击穿电压为22．5V，理想因子为1．19，肖特基势垒高度为1．48eV。
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| 关 键 词： | AlSiC肖特基垫垒二极管 二极管 碳化硅 肖特基垫垒 |
| 文章编号： | 1000-100X(2002)05-0075-03 |
| 修稿时间： | 2002-01-21 |
Al Schottky Barrier Diodes on Silicon Carbide |
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| LIU Su,NING Chang chun,SUN Yan ling. Al Schottky Barrier Diodes on Silicon Carbide[J]. Power Electronics, 2002, 36(5): 75-77 |
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| Authors: | LIU Su NING Chang chun SUN Yan ling |
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| Abstract: | This paper describes the fabrication and characteristics of the Schottky barrier diodes using thermal evaporation of Al on SiC. The SiC layers are grown on Si(111) substrates by radio frequency sputtering. Measurements of the I-V characteristics of these diodes show the devices have good rectifying property and thermionic emission current is the dominant conduction mechanism for these Schottky contacts. The ideal factor is 1.19 and barrier height is 1.48eV, respectively. |
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| Keywords: | diode silicon carbide Schottky barrier |
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