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功率MOSFET驱动保护电路设计与应用
引用本文:田颖,陈培红,聂圣芳,卢青春.功率MOSFET驱动保护电路设计与应用[J].电力电子技术,2005,39(1):73-74,80.
作者姓名:田颖  陈培红  聂圣芳  卢青春
作者单位:清华大学,北京,100084
摘    要:分析了对功率MOSFET器件的设计要求;设计了基于EXB841驱动模块的功率MOSFET驱动保护电路。该电路具有结构简单,实用性强,响应速度快等特点。在电涡流测功机励磁线圈驱动电路中的实际应用证明,该电路驱动能力及保护功能效果良好。

关 键 词:模块  驱动电路/功率金属氧化物场效应晶体管  保护电路
文章编号:1000-100X(2005)01-0073-02

Design and Application of Power MOSFET Drive and Protection Circuit based on EXB841
TIAN Ying,CHEN Pei-hong,NIE Sheng-fang,LU Qing-chun.Design and Application of Power MOSFET Drive and Protection Circuit based on EXB841[J].Power Electronics,2005,39(1):73-74,80.
Authors:TIAN Ying  CHEN Pei-hong  NIE Sheng-fang  LU Qing-chun
Abstract:The authors analyze the design request of power MOSFET device. On the basis of the analysis the power MOSFET drive and protection circuit based on EXB841 was designed.The circuits was characterized by simple structure, well application and quick response.Its practical application to the excitation winding drive circuit of eddy current dynamometer proved that the drive capability and protecting function achieves well results.
Keywords:module  drive circuit / power MOSFET  protection circuit
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