| IGBT模块应用中过电压的抑制 |
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| 引用本文： | 孙国印.IGBT模块应用中过电压的抑制[J].电力电子技术,2002,36(4):73-74,23. |
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| 作者姓名： | 孙国印 |
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| 作者单位： | 洛阳单晶硅有限责任公司,洛阳,471000 |
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| 摘 要： | 寄生杂散电感会使超快速IGBT关断时产生过电压尖峰，通常抑制过电压的方法会增加IGBT开关损耗或外围器件的耗散功率。介绍了有效抑制IGBT关断中过电压的新方法。
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| 关 键 词： | IGBT模块 过电压 绝缘栅双极晶体管 开关损耗 寄生电感 |
| 文章编号： | 1000-100X(2002)04-0073-02 |
Over-voltage Suppression in Application of IGBT Module |
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| SUN Guo,yin.Over-voltage Suppression in Application of IGBT Module[J].Power Electronics,2002,36(4):73-74,23. |
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| Authors: | SUN Guo yin |
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| Abstract: | Random existed parasite inductances in IGBT circuit will make over voltage spike during the IGBT tun off transient.Supressing the voltage spike is often at the expense of increasing power losses of devices in the circuit.In order to compromise these two tendences,a new method to optimize the circuit design and its applying result are described detailly. |
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| Keywords: | module IGBT over voltage switching loss parasite inductance |
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