| 三相IGBT逆变器中的尖峰电压分析 |
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| 引用本文： | 郭犇,李思奇,蒋晓华,Shinichi Isobe.三相IGBT逆变器中的尖峰电压分析[J].电力电子技术,2010,44(10). |
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| 作者姓名： | 郭犇 李思奇 蒋晓华 Shinichi Isobe |
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| 作者单位： | 1. 清华大学,北京,100084
2. 三菱重工名古屋研究所,日本,名古屋,4538515 |
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| 基金项目： | 日本三菱重工基金资助项目 |
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| 摘 要： | 母线排的杂散电感和开关过程中较大的di/dt会在IGBT上引起很高的尖峰电压,从而增加了逆变器的开关损耗,降低了可靠性。提出针对三相IGBT逆变器中尖峰电压的分析方法。首先利用有限元法对三相IGBT逆变器中两种不同类型母线排建模,分析提取母线排的杂散参数,接着在PSpice中建立逆变器各部分等效电路模型,利用该模型对IGBT逆变器中的尖峰电压进行仿真分析。实验研究表明,在不同负载电流下,仿真和实测尖峰电压在峰值和波形上都具有良好的符合度,表明该方法能够较准确地分析和预测逆变器中的尖峰电压。
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| 关 键 词： | 逆变器 尖峰电压 母线排 杂散电感 |
The Analysis of Surge Voltage in Three-phase IGBT Inverters |
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| GUO Ben,LI Si-qi,JIANG Xiao-hua,Shinichi Isobe.The Analysis of Surge Voltage in Three-phase IGBT Inverters[J].Power Electronics,2010,44(10). |
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| Authors: | GUO Ben LI Si-qi JIANG Xiao-hua Shinichi Isobe |
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| Affiliation: | GUO Ben1,LI Si-qi1,JIANG Xiao-hua1,Shinichi Isobe2(1.Tsinghua University,Beijing 100084,China,2.Nagoya R&D Center,Mitsubishi Heavy Industries Ltd.,Nagoya 4538515,Japan) |
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| Abstract: | Parasitic inductance of the busbar and large di/dt during switching process cause serious surge voltage in inverters,which increase extra loss and reduce the reliability of the inverter.Two different types of the busbar in three-phase IGBT inverters are modeled with the JMAG software,which is based on the finite element analysis(FEA)method.Then the parasitic parameters of the busbar are extracted and integrated into the inverter model which built with PSpice software to analyze the surge voltage on IGBTs un... |
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| Keywords: | inverter surge voltage busbar parasitic inductance |
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