掩模特征尺寸稳定性工艺控制

半导体掩模特征尺寸的大小是判断掩模制造水平的重要标准.介绍了影响半导体掩模特征尺寸的因素.指出了工艺稳定性是控制掩模线条尺寸的关键.通过对曝光、显影两道关键工艺的实验,分析了曝光量、镜头焦距和显影时间是影响掩模特征尺寸稳定性的重要因素.实验表明:曝光、显影设备间隔一段时间未用需作监控测试;光刻胶厚度和掩模衬底的反射作用,会对掩模特征尺寸的稳定性产生影响,应加强对胶厚的严格监控.

Stability Control for Mask Feature Size

Feature Size (FS) is one of the most important criteria that represents mask technique level. The article introduces the factors that impact FS and points out the key to ensure it is the process stability. By experiments taken for exposure and developer process, it is identified that exposure dose, lens focus length and developing duration are the key factors that impact FS stability. The experiment result shows that testing and monitoring have to be done when exposure and developer equipments have been unused for time. The result tells as well photoresist thicknes needs to be paid attention to control. Because mask FS stability is impacted by both thickness of photoresist and the effect of substrate refection.