首页 | 本学科首页   官方微博 | 高级检索  
     

掩模特征尺寸稳定性工艺控制
引用本文:胡广荣,李文石. 掩模特征尺寸稳定性工艺控制[J]. 江苏电器, 2007, 0(Z1)
作者姓名:胡广荣  李文石
作者单位:苏州大学电子信息学院 江苏苏州215021
摘    要:半导体掩模特征尺寸的大小是判断掩模制造水平的重要标准.介绍了影响半导体掩模特征尺寸的因素.指出了工艺稳定性是控制掩模线条尺寸的关键.通过对曝光、显影两道关键工艺的实验,分析了曝光量、镜头焦距和显影时间是影响掩模特征尺寸稳定性的重要因素.实验表明:曝光、显影设备间隔一段时间未用需作监控测试;光刻胶厚度和掩模衬底的反射作用,会对掩模特征尺寸的稳定性产生影响,应加强对胶厚的严格监控.

关 键 词:特征尺寸  稳定性  工艺控制  掩模  曝光  显影  光刻胶  掩模  特征  尺寸稳定性  工艺控制  Size  Feature  Mask  Control  监控测试  加强  作用  反射  光刻胶厚度  显影时间  设备  镜头焦距  曝光量  分析  实验  关键工艺

Stability Control for Mask Feature Size
HU Guang-rong,LI Wen-shi. Stability Control for Mask Feature Size[J]. , 2007, 0(Z1)
Authors:HU Guang-rong  LI Wen-shi
Abstract:Feature Size (FS) is one of the most important criteria that represents mask technique level. The article introduces the factors that impact FS and points out the key to ensure it is the process stability. By experiments taken for exposure and developer process, it is identified that exposure dose, lens focus length and developing duration are the key factors that impact FS stability. The experiment result shows that testing and monitoring have to be done when exposure and developer equipments have been unused for time. The result tells as well photoresist thicknes needs to be paid attention to control. Because mask FS stability is impacted by both thickness of photoresist and the effect of substrate refection.
Keywords:feature size  stability  process control  mask  exposure  developer  photoresist
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号