| 靶材密度对射频磁控溅射法制备ITO薄膜性能的影响 |
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| 引用本文： | 黄玉音,肖渊渊,朱归胜.靶材密度对射频磁控溅射法制备ITO薄膜性能的影响[J].电工材料,2013(1):41-44. |
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| 作者姓名： | 黄玉音 肖渊渊 朱归胜 |
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| 作者单位： | 桂林电子科技大学材料科学与工程学院;桂林电子科技大学广西信息材料重点实验室 |
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| 基金项目： | 国家级大学生创新性试验项目(101059528);广西信息材料重点实验室开放基金项目(桂科能1110908-10-Z);国家自然科学基金项目(21176051,61166008) |
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| 摘 要： | 以不同密度的氧化锡铟（ITO））靶材为原料，采用射频磁控溅射法，在室温下沉积并经750℃退火，获得了电阻率为1．56×10^-4Ω·cm、可见光透过率为87％的ITO薄膜。对不同密度靶材制备的ITO薄膜的微观结构、电学及光学性能进行了表征与探讨。结果表明，采用射频磁控溅射法时，不同靶材密度对ITO薄膜的沉积速率、结构、电学和光学性能均无显著影响。该结果为采用低密度ITO靶材制备高品质ITO薄膜提供了一个新的思路。
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| 关 键 词： | 氧化锡铟（ITO） 靶材密度 薄膜 射频磁控溅射 |
Effect of Target Density on Properties of Indium Tin Oxide Films Prepared by Radio Frequency Magnetron Sputtering |
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| HUANG Yu-yina,XIAO Yuan-yuana,ZHU Gui-sheng.Effect of Target Density on Properties of Indium Tin Oxide Films Prepared by Radio Frequency Magnetron Sputtering[J].Electrical Engineering Materials,2013(1):41-44. |
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| Authors: | HUANG Yu-yina XIAO Yuan-yuana ZHU Gui-sheng |
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| Affiliation: | a,b(a.School of Materials Science and Engineering;b.Guangxi Key Laboratory of Information Materials,Guilin University of Electronic Technology,Guangxi Guilin 541004,China) |
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| Abstract: | In this paper, indium tin oxide（ITO） targets with different densities were used to deposit ITO films by radio frequency magnetron sputtering（RFMS）. The films were deposited from these targets at room temperature and annealed at 750℃. Microstructural, electrical and optical properties of the as-prepared films were studied. Results show that the target density has no effect on the properties or deposition rate of ITO films prepared by RFMS. Therefore, a new idea is provided for preparing high-quality ITO films with low-density ITO targets. |
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| Keywords: | indium tin oxide（ITO） target density film radio frequency magnetron sputtering |
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