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Effects of the single and double (overlap) scanned excimer laser annealing on solid phase crystallized silicon films
Affiliation:1. Samsung Mobile Display Co., LTD., San #24, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-711, Republic of Korea;2. Department of Physics, Chungnam National University, Daejeon 305-764, Republic of Korea;1. Department of Physics, Chungnam National University, 220 Gung-Dong, Yuseong-Gu, Daejeon 305-764, South Korea;2. Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea;1. Applied Physics and Materials Science, Caltech, Pasadena, CA, 91125, USA;2. Center for Vacuum Technology, Korea Research Institute of Standards and Science, Daejeon, 34113, South Korea;3. Department of Physics, Chungnam National University, Daejeon, 34134, South Korea;1. Department of Physics, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon, 305-764, South Korea;2. Department of Material Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, South Korea;1. Microoptics and GRIN Optics Group, Applied Physics Department, Faculty of Physics, University of Santiago de Compostela, Santiago de Compostela E15782, Spain;2. Instituto de Cerámica y Vidrio (CSIC), Kelsen 5, Campus de Cantoblanco, 28049 Madrid, Spain;3. School of Physics, National Centre for Laser Applications, National University of Ireland, University Road, Galway, Ireland;1. Department of Physics, Soongsil University, Seoul 156-743, Republic of Korea;2. Department of Physics, Choongnam National University, Daejeon 305-764, Republic of Korea;3. Department of Physics, Chonbuk National University, Jeonju 561-756, Republic of Korea;1. Physics Department, University of Florida, Gainesville, FL 32611, USA;2. Department of Physics, Chungnam National University, Daejeon 305-764, Republic of Korea
Abstract:Thin amorphous silicon (a-Si) films were crystallized into polycrystalline silicon (poly-Si) by combining solid phase crystallization (SPC) and subsequent excimer laser annealing (ELA). Then thin film transistors (TFTs) were fabricated by using the poly-Si formed in the single and double excimer laser scanned area. The device performance of the TFTs fabricated with the excimer laser energy density of 230 mJ/cm2 is almost equal for the single and double scanned area. This observation indicates that the overlapping laser irradiation with the laser energy density below 230 mJ/cm2 does not change the characteristics of TFTs. Based on this result, we discuss the correlation between performance of active matrix organic light emitting display (AMOLED) panels and excimer laser energy density during ELA for SPC treated and non-treated poly-Si films.
Keywords:AMOLED  Thin film transistors  Excimer laser annealing  Solid phase crystallization
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