首页 | 本学科首页   官方微博 | 高级检索  
     

自旋阀多层膜巨磁电阻的研制
引用本文:温殿忠.自旋阀多层膜巨磁电阻的研制[J].传感技术学报,2006,19(5):2050-2053.
作者姓名:温殿忠
作者单位:黑龙江大学集成电路重点实验室,哈尔滨,150080;黑龙江大学电子工程黑龙江省高校重点实验室,哈尔滨,150080
基金项目:黑龙江省重点实验室基金
摘    要:阐述了多层膜巨磁电阻自旋阀的设计原理和采用金属掩膜版磁控溅射的方法研制多层膜巨磁电阻自旋阀的工艺.制造的多层膜巨磁电阻采用Co/Cu/Co]三重结构.同时分析了制备的Cu、Co纳米膜的形貌以及利用自旋阀GMR传感器测试得到的实验校准数据并绘制出输出-输入曲线.实验结果表明,制造的巨磁电阻提高了低场下的磁灵敏度,可以用来检测不同方位地磁场的大小,用该方法制造巨磁电阻的迟滞为0.01%F.S.文中介绍的多层膜巨磁电阻制造方法具有工艺简单、可与IC工艺相兼容的优点,有推广应用前景.

关 键 词:Cu/Co纳米薄膜  扫描电镜  巨磁电阻  金属掩膜技术  磁控溅射
文章编号:1004-1699(2006)05-2050-04
修稿时间:2006年7月1日

Research Fabrication of spinning valve multilayer membrane GMR
Wendianzhong.Research Fabrication of spinning valve multilayer membrane GMR[J].Journal of Transduction Technology,2006,19(5):2050-2053.
Authors:Wendianzhong
Abstract:This paper expatiates on the fabrication of the Spinning Valve based on the multilayer membrane Giant Magnetoresistance (GMR) theory,which involving the metal mask and the R.F magnetron sputtering technology in the process. The Co/Cu/Co] structure features largely in the GMR we manufactured. We provide the SEM photos showing the surface structure of the samples , and also the testing data plot of that GMR sensor. The experimental results indicate that the GMR possessing relatively high magnetism sensitivity can be used even to measure the change of the geomagnetism. The positive and negative trip measuring error is 0.01%F.S for that GMR. The technology focused for the fabrication of GMR is simple and convenient, especially goes well with the ICs technology. It can be used widely in variety of application aspects.
Keywords:Cu/Co nanometer membrane  SEM  GMR  metal mask technology  R  F sputtering
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《传感技术学报》浏览原始摘要信息
点击此处可从《传感技术学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号