硅片键合界面的应力研究

本文主要研究硅片直接键合界面结构与应力大小.当抛光硅片直接键合时,界面出现极薄的过渡区,并存在微小的晶向差,但不引起多余应力.当热生长了二氧化硅层的硅片相键合时,界面存在二氧化硅层,并引起张应力,其大小与硅二氧化硅系统应力大小相当.

Study of Si Wafer Direct Bonding Interface Stress

This paper mainly discusses silicon wafer direct bonding interfaceconstruction and interface stress. When polish silicon wafer directly bond, there are avery thin transition field and a tiny lattice-error, but no more stress in drawn into.When silicon wafers grown SiO2 layer by heating were bonded, there is SiO2 layer no interface, and the numerical value of drawing into stress equals that of Si-SiO2 systemstress.