| 薄膜体声波谐振器(FBAR)谐振特性的模拟分析* |
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| 引用本文： | 汤 亮,郝震宏,乔东海.薄膜体声波谐振器(FBAR)谐振特性的模拟分析*[J].传感技术学报,2006,19(5):1911-1916. |
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| 作者姓名： | 汤 亮 郝震宏 乔东海 |
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| 作者单位： | 中国科学院声学研究所微机电实验室,北京,100080 |
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| 摘 要： | 主要利用Mason等效电路模型对加入介质声损耗的薄膜体声波谐振器输入阻抗公式进行了推导,并利用该结果对薄膜体声波谐振器的谐振特性进行了模拟分析,分别就不同压电层材料和厚度以及不同电极材料和厚度对薄膜体声波谐振器谐振特性的影响进行了详细分析.结果表明,薄膜体声波谐振器谐振频率主要由压电材料和厚度决定但电极的影响也是很大的.在制作高频FBAR器件(5GHz以上)时,采用氮化铝作压电材料比用氧化锌作压电材料更合适.
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| 关 键 词： | 薄膜体声波谐振器(FBAR) Mason等效电路模型 微波振荡器 双工器 射频微机电系统 |
| 文章编号： | 1004-1699(2006)05-1911-06 |
| 修稿时间： | 2006年7月1日 |
Simulation and Analysis of the Resonant Properties of FBARs |
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| TANG Liang,HAO Zhen-hong,QIAO Dong-hai.Simulation and Analysis of the Resonant Properties of FBARs[J].Journal of Transduction Technology,2006,19(5):1911-1916. |
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| Authors: | TANG Liang HAO Zhen-hong QIAO Dong-hai |
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| Affiliation: | MEMS laboratory of the Institute of Acoustics, Chinese Academy of Sciences, Beijing, 100080, China |
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| Abstract: | The input impedance formula of film bulk acoustic resonators (FBARs) with acoustic attenuation is derived from the Mason equivalent circuit model. With this formula, the resonant properties of FBARs are simulated and analyzed. The influence of different materials and thickness of piezoelectric layer and electrodes on the resonant properties is investigated. The results indicate that the resonant frequency is mainly determined by the piezoelectric material and thickness, but electrodes also play important roles. For FBARs over 5GHz, it is suggested to use AlN instead of ZnO for piezoelectric layer. |
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| Keywords: | film bulk acoustic resonator (FBAR) Mason equivalent circuit model microwave oscillator duplexer RF-MEMS |
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