Si基多层Ge量子点近红外光电探测器研制

采用超高真空化学气相沉积( UHV/CVD)技术在Si衬底上外延生长了PIN结构多层Ge量子点探测器材料。 PIN探测器结构由N型Si衬底，多层Ge量子点吸收区，和原位掺杂P型Si盖层构成，电极分别制作于N-Si和P-Si上，以获得好的欧姆接触。制备的Si基Ge量子点光电探测器具有较低的暗电流密度(-1 V偏压下为7.35×10-6 A/cm2)，与Si相比，探测波长延伸到1.31μm波段。

Study of Si-based multilayer Ge quantum dots near-infrared photodetector

The structure of multilayer Ge quantum dots( QDs) was eptaxial grown on Si substrate by ultra-high vacu-um chemical vapor deposition( UHV/CVD) technique for detector fabrication. The intrinsic multilayer Ge QDs were acted as an absorption region,while the N-Si substrate and the in situ capped P-Si layer were chosen for the forma-tion of ohmic contact. The fabricated photodetector has a low dark current density(7.35×10-6 A/cm2 at -1 V),and the wavelength limit is extended to 1.31 μm compared with Si photodetector.