| Ka波段硅基MEMS滤波器 |
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| 引用本文： | 张勇,郁元卫,贾世星,朱健,陈辰.Ka波段硅基MEMS滤波器[J].传感技术学报,2008,21(2):325-328. |
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| 作者姓名： | 张勇 郁元卫 贾世星 朱健 陈辰 |
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| 作者单位： | 南京电子器件研究所,南京,210016;南京电子器件研究所,南京,210016;单片集成电路与模块国家级重点实验室,南京,210016 |
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| 摘 要： | 滤波器是微波毫米波电路中的一个重要部件,本文介绍了采用基片集成波导技术和ICP深刻蚀微机械通孔阵列的硅基MEMS滤波器.设计制作了MEMS滤波器的核心部件谐振器,测试结果显示该谐振器无载Q值大于180,频率误差控制在2%以内.以此为基础采用理论计算与实验设计相结合的方法设计了一个Ka波段硅基MEMS滤波器.滤波器中心频率为30.3 GHz,插入损耗1.5 dB,相对带宽5%.芯片尺寸为10.0 mm×2.8 mm×0.4 mm.
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| 关 键 词： | MEMS滤波器 耦合 基片集成波导 Ka波段 |
| 文章编号： | 1004-1699(2008)02-0325-04 |
| 修稿时间： | 2007年9月30日 |
Ka Band Silicon Based MEMS Filter |
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| ZHANG Yong,YU Yuanwei,JIA Shixing,ZHU Jian,CHEN Chen.Ka Band Silicon Based MEMS Filter[J].Journal of Transduction Technology,2008,21(2):325-328. |
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| Authors: | ZHANG Yong YU Yuanwei JIA Shixing ZHU Jian CHEN Chen |
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| Affiliation: | 1.Nanjing Electronic Devices Institute, Nanjing,210016
2. National Key Lab. of Monolithic Integrated Circuits and Modules, Nanjing, 210016 |
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| Abstract: | Filter is a kind of important component in microwave and millimeter wave circuits and systems. In this paper, a novel kind of filter is introduced. It is based on the substrate integrated waveguide (SIW) and MEMS technique. Induced coupling plasma (ICP) deep etching is done to get vertical via-holes in the high resistivity silicon substrate. Measured results of a fabricated MEMS resonator which is the core component of the SIW filter show a high Q of 180 and a small error of 2% of the resonating frequency. To design a Ka band filter, theoretical calculation and experiment design method are used and described in detail. The frequency of the filter is 30.3GHz; the insertion loss is 1.5dB; and the band width is 5%. The final size of the chip is 10.0mm×2.8mm×0.4mm. |
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| Keywords: | MEMS Filter Coupling SIW Ka Band |
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