Planar split dual gate MOSFET |
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Authors: | DeYuan Xiao Gary Chen Roger Lee Yung Liu and ChiCheong Shen |
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Affiliation: | (1) Memory Technology Development Center, Semiconductor Manufacturing International (Shanghai) Corp., Shanghai, 201203, China |
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Abstract: | A new planar split dual gate (PSDG) MOSFET device, its characteristics and experimental results, as well as the three dimensional
device simulations, are reported here for the first time. Both theoretical calculation and 3D simulation, as well as the experiment
data, show that the two independent split dual gates can provide dynamical control of the device characteristics, such as
threshold voltage (V
t) and sub-threshold swing (SS), as well as the device saturated current. The PSDG MOSFET transistor leakage current (Ioff)
can be reduced as much as 78% of the traditional single gate MOSFET. The PSDG is fabricated and fully compatible with our
conventional 0.18 μm logic process flow. |
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Keywords: | novel device MOSFET planar split dual gate tunable sub-threshold swing |
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