Design and fabrication of an alternating dielectric multi-layer device for surface plasmon resonance sensor |
| |
| Affiliation: | 1. Institute of Biomedical Engineering, College of Engineering and College of Medicine, National Taiwan University, No. 1, Sec. 1, Ren-Ai Road, Taipei 100, Taiwan;2. Department of Electrical Engineering, College of Electrical Engineering and Computer Science, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan;3. Precision Instrument Development Center, National Science Council, 20 R&D Road VI, Hsinchu Science Park, Hsinchu 300, Taiwan;4. Center for Optoelectronic Biomedicine, College of Medicine, No. 1, Sec. 1, Ren-Ai Road, Taipei 100, Taiwan;5. Institute of Applied Mechanics, College of Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan;6. Center for Nano Science and Technology, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan;1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore;2. Institute for Global Food Security, School of Biological Sciences, Queen''s University Belfast, Belfast BT9 5AG, United Kingdom;3. School of Materials Science and Engineering, Nanyang Technological University, Singapore 637371, Singapore;4. NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore;1. Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel;2. Physics Department, Indian Institute of Technology Delhi, New Delhi 110016, India;1. National Engineering Laboratory for Fiber Optic Sensing Technology, Wuhan University of Technology, Wuhan 430070, China;2. Key Laboratory of Fiber Optic Sensing Technology and Information Processing, Ministry of Education, Wuhan University of Technology, Wuhan 430070, China;3. School of Life Sciences, Central China Normal University, Wuhan 430079, China;1. Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004, Uttar Pradesh, India;2. Department of Physics, B.H.U., Varanasi 221005, Uttar Pradesh, India;3. Department of Electronics and Communication Engineering, Bundelkhand Institute of Engineering and Technology, Jhansi 284128, Uttar Pradesh, India;1. Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh;2. School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON K1N 6N5, Canada;3. Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557, USA;1. Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;2. Electronic Engineering Department, City University of Hong Kong, Tat Chee Avenue, Hong Kong |
| |
| Abstract: | An alternating dielectric multi-layer device was fabricated and tested in the laboratory to show that dielectric mirrors of alternating high/low refractive index materials, based on the design of distributed Bragg reflector (DBR) for vertical cavity surface emission lasers (VCSELs), can be used in designing SPR biochemical sensors. The thickness, number of layers, and other design parameters of the device used were optimized using optical admittance loci analysis. The proof-of-concept device was fabricated with a symmetrical structure using Au/(SiO2/TiO2)4/Au.Using a 632 nm-wavelength light source on a BK7 coupling prism, our laboratory tests showed that, under water, there was an 11.5° shift in resonant peak position towards the critical angle (from 74° in a conventional single-layer Au film), and a 3.25 times decrease in FWHM (the half-peak width). Our design also resulted in a wider dynamic range of up to a 1.50 refractive index unit (RIU), compared to 1.38 RIU in a conventional single-layer Au film. Using glucose solutions in ddH2O, the calculated resolution was 1.28 × 10?5. The calculated intensity sensitivity was 10 000 a.u./RIU, about twice the improvement over the conventional single-layer Au film. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
