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自偏置低噪放的设计与改进
引用本文:梁俊杰,薛红喜. 自偏置低噪放的设计与改进[J]. 电子技术应用, 2011, 37(2): 113-115
作者姓名:梁俊杰  薛红喜
作者单位:电子科技大学电子工程学院,四川,成都,611731
摘    要:分析了贴片电容的非理想特性在C波段及以上频率的自偏置电路旁路应用中对低噪放设计的不利影响.分析表明,贴片电容用做自偏置旁路时将严重恶化电路的稳定性和噪声指标.提出了对自偏置电路的改进方法及工艺实现,从而避免了电容对指标的负面影响.为了验证改进电路的优势,采用改进的自偏置电路设计了6 GHz~9 GHz低噪放,实验结果很...

关 键 词:低噪放  自偏置  隔直电容  旁路电容  C波段

The design and improvement of self-bias LNA
Liang Junjie,Xue Hongxi. The design and improvement of self-bias LNA[J]. Application of Electronic Technique, 2011, 37(2): 113-115
Authors:Liang Junjie  Xue Hongxi
Affiliation:Liang Junjie,Xue Hongxi(School of Electronic Engineering,UESTC,Chengdu 611731,China)
Abstract:This paper analyzes the non-ideal characteristics of surface mount capacitors which have disadvantages to LNA design as a bypass of self-bias at the C-band or above.The analysis shows that: stability and noise figure specifications will be damaged when it is used for bypass in self-bias.This paper improves the self-bias circuit and avoids the impact of non-ideal capacitor.Improved self-bias LNA have been implemented,and the test results validate the analysis.
Keywords:LNA  self-bias  coupling capacitor  bypass capacitor  C-band  
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