忆阻器状态逻辑中与操作的高效设计与实现

作为电阻、电容、电感之外的第4种基本电路元件,忆阻器自2008年被发现以来受到学术界和产业界的广泛关注.忆阻器的阻值记忆效应和纳米工艺制造方式使其被认为可用于构建未来更大容量和密度的存储器,逐渐替代FLASH等现有存储器件.除存储功能外,HP公司在2010年《Nature》上发表的文章表明,忆阻器还可以通过以蕴含为基础的状态逻辑实现任意逻辑运算.研究了忆阻器状态逻辑的另一种操作——与操作,提出了一种更加高效的与操作实现方法,该方法不需要增加额外的忆阻器,降低了激励电压的复杂性,减小了误差,使运算更加简便高效.最后通过SPICE模拟仿真对提出的方法进行了验证.

An Efficient Design and Implementation of AND Operation in Stateful Logic Based on Memristor

As the fourth fundamental circuit element besides resistor, capacitor, and inductor, memristor has been paid much attention by academia and industry since it was found in 2008. The characteristics of memristor, such as the last-resistance-remembering, and nanotechnology make the construction of larger and highly dense memory possible in future, which could take place of the current memory devices, like FLASH. In 2010, HP labs published one paper in Nature, which shows that the memristor can be used not only as memory but also to realize any logic operation using ‘stateful’ logic based on the implication operation. The paper presents another operation in stateful logic of memristor—The AND operation. Moreover, an efficient method to implement the AND operation is proposed, which doesn’t need additional memristors, decreases stimulated voltage, and reduces the resistance error. Our method makes the computation simpler and more effective. At last, our method is verified by the SPICE simulation.