| 提高L80C86系列10种电路性能的研究 |
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| 引用本文： | 喻德顺,郭常厚,孙明峰.提高L80C86系列10种电路性能的研究[J].微处理机,1999(4). |
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| 作者姓名： | 喻德顺 郭常厚 孙明峰 |
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| 作者单位： | 东北微电子研究所,沈阳,110032 |
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| 摘 要： | 简介了提高 L80 C86系列 1 0种电路性能的技术原理和方法
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| 关 键 词： | 准双阱 阈值电压VT 版图优化设计 |
Study of Improved Performance of 10type Circuits in L80C86 Family |
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| Yu Deshun,Northeast Microelectronics Institute,Shenyang.Study of Improved Performance of 10type Circuits in L80C86 Family[J].Microprocessors,1999(4). |
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| Authors: | Yu Deshun Northeast Microelectronics Institute Shenyang |
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| Affiliation: | Yu Deshun,Northeast Microelectronics Institute,Shenyang 110032 |
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| Abstract: | This paper introduced technical principle and method of improved performance of 10 type circuits briefly. |
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| Keywords: | quasi twin-well threshold V T optimizing the layout design |
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