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| 图形化SOI LDMOS功率器件的性能分析 | |
| 引用本文： | 程新红,宋朝瑞,俞跃辉,赵天麟,李树良.图形化SOI LDMOS功率器件的性能分析[J].微处理机,2005,26(4):1-2. |
| 作者姓名： | 程新红 宋朝瑞 俞跃辉 赵天麟 李树良 |
| 作者单位： | 1. 温州大学物理与电子信息学院,温州,325000 2. 中科院上海微系统与信息技术研究,上海,200050 3. 东北微电子研究所,沈阳,110032 |
| 摘 要： | 本文提出了一种在沟道下方埋氧层中开硅窗口的图形化SOI LDMOSFET新结构.工艺和性能分析表明,它可抑制SOI结构的浮体效应和自加热效应,具有低的泄漏电流,以及高的电流驱动能力.这种结构具有提高SOI功率器件性能和稳定性的开发潜力. |
| 关 键 词： | 图形化SOI 浮体效应 自加热效应 |
| 文章编号： | 1002-2279(2005)04-0001-02 |
| 修稿时间： | 2004年10月10 |
Performance analysis of a patterned- SOI LDMOS power amplifier |
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| CHENG Xin-hong,SONG Zhao-rui,YU Yue-hui,et al.Performance analysis of a patterned- SOI LDMOS power amplifier[J].Microprocessors,2005,26(4):1-2. | |
| Authors: | CHENG Xin-hong SONG Zhao-rui YU Yue-hui |
| Affiliation: | CHENG Xin-hong~1,SONG Zhao-rui~2,YU Yue-hui~2,et al |
| Abstract: | A novel patterned-SOI (patterned-Silicon-On-Insulator) LDMOS structure with a silicon window beneath the P well is proposed and simulated numerically. In comparison to the partially-depleted SOI counterpart, the floating body effect and self-heating effect are distinctly suppressed. Furthermore, the advantage of SOI structure's low leakage current do not degrade, and the current driving capability is high. The proposed structure will be a promising choice to improve the performance and stability of SOI power devices. |
| Keywords: | LDMOSFET |
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