| 相变存储器存储单元瞬态电流测量 |
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| 引用本文： | 马翠,李震,彭菊红,缪向水.相变存储器存储单元瞬态电流测量[J].计算机与数字工程,2012,40(2):130-132. |
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| 作者姓名： | 马翠 李震 彭菊红 缪向水 |
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| 作者单位： | 华中科技大学电子科学与技术系 武汉430074;武汉光电国家实验室 武汉430074 |
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| 基金项目： | 国家八六三重大项目（编号：2009AA01Z113 2009AA01A402）资助 |
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| 摘 要： | 介绍了相变存储单元瞬态电流的测量方法。根据相变存储器的工作特性,利用微弱电流取样电阻测量法,合理选择测量参数测得了相变存储单元的瞬态电流,电阻与电流关系特性曲线和动态电阻。并根据测量电路等效电路模型分析影响测量的因素,估算出电路中的分布电容。
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| 关 键 词： | 相变存储器 瞬态电流测量 等效电路模型 分布电容 |
Transient Programming Current Measurement of Phase Change Memory |
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| MA Cui
,
LI Zhen
,
PENG Juhong
,
MIAO Xiangshui.Transient Programming Current Measurement of Phase Change Memory[J].Computer and Digital Engineering,2012,40(2):130-132. |
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| Authors: | MA Cui LI Zhen PENG Juhong MIAO Xiangshui |
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| Affiliation: | 1.Department of Electronic Science and Technology,Huazhong University of Science and Technology,Wuhan 430074)(2.Wuhan National Laboratory for Optoelectronics,Wuhan 430074) |
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| Abstract: | The measurement method of transient programmig current for phase change memory is introduced.According to the operating characteristics of phase change memory,the transient current,the resistance and current relationship characteristics and the dynamic resistance of phase change memory are measured using small current sense resistor measurement through choosing the reasonable measurement parameters.By utilizing the equivalent circuit model of the measurement circuit,we analyze the factors which affect the measurement and calculate the distributed capacitance. |
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| Keywords: | phase change memory transient current measurement the equivalent circuit model the distributed capacitance |
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