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Patterning of quantum dot light-emitting diodes based on IGZO films |
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| Authors: | Jingrui Ma Siqi Jia Xiangwei Qu Haodong Tang Bing Xu Zhenghui Wu Pai Liu Kai Wang Xiaochuan Yang Wenwei Xu Xiao Wei Sun |
| Affiliation: | 1. Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, China;2. Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, China
Guangdong-Hong Kong-Macao Joint, Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China SUSTech-HUAWEI Joint Lab for Photonics Industry, Southern University of Science and Technology, Shenzhen, China;3. Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, China Guangdong-Hong Kong-Macao Joint, Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China;4. Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, China Guangdong-Hong Kong-Macao Joint, Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China Shenzhen Planck Innovation Technologies Co. Ltd, Shenzhen, China;5. SUSTech-HUAWEI Joint Lab for Photonics Industry, Southern University of Science and Technology, Shenzhen, China Institute of Strategic Research, Huawei Technologies Co., Ltd, Shenzhen, China;6. SUSTech-HUAWEI Joint Lab for Photonics Industry, Southern University of Science and Technology, Shenzhen, China |
| Abstract: | The patterning of quantum dot light-emitting diodes (QLED) is essential for QLED in the display application. In the work, we studied patterning thin film to form IGZO electron transport layers for QLED. Making use of a staggered IGZO film as the electron transport layer, we studied QLED degradation and observed luminance inversion, which is due to the non-uniform current spreading effect caused by the staggered IGZO film. The current crowding at the thinner film area (with lower electric resistance) leads to a patterned emission of the device but also a faster device degradation at the same time. |
| Keywords: | failure IGZO patterning quantum dot light-emitting diodes stability |