| 射频磁控溅射功率对Ni-Mn-Ga薄膜成分与形貌的影响 |
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| 引用本文： | 陈峰华,张敏刚,柴跃生,张真真.射频磁控溅射功率对Ni-Mn-Ga薄膜成分与形貌的影响[J].传感器与微系统,2011,30(4):85-86,98. |
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| 作者姓名： | 陈峰华 张敏刚 柴跃生 张真真 |
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| 作者单位： | 太原科技大学,山西,太原,030024 |
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| 基金项目： | 山西省自然科学基金资助项目，山西省研究生创新基金资助项目，太原市大学生创新创业专题项目 |
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| 摘 要： | 采用射频磁控溅射镀膜技术在P型Si(100)基片上沉积Ni-Mn-Ga薄膜.实验结果表明,射频溅射功率对Ni-Mn-Ga薄膜成分与形貌有显著地影响.Ni含量随溅射功率的升高呈先增加后减少的趋势,Mn含量呈先减少后增加的趋势,Ga含量几乎呈线性减少的趋势.薄膜的价电子浓度(e/a)变化较小.参考英国国家物理实验室数据中有...
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| 关 键 词： | 射频磁控溅射 薄膜成分 薄膜形貌 价电子浓度 |
Effect of RF magnetron sputtering power on the Ni-Mn-Ga thin film composition and morphology |
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| CHEN Feng-hua,ZHANG Min-gang,CHAI Yue-sheng,ZHANG Zhen-zhen.Effect of RF magnetron sputtering power on the Ni-Mn-Ga thin film composition and morphology[J].Transducer and Microsystem Technology,2011,30(4):85-86,98. |
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| Authors: | CHEN Feng-hua ZHANG Min-gang CHAI Yue-sheng ZHANG Zhen-zhen |
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| Affiliation: | (Taiyuan University of Science and Technology,Taiyuan 030024,China) |
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| Abstract: | Ni-Mn-Ga ferromagnetic shape memory thin films have been deposited on P type Si(100)substrates by means of RF magnetron sputtering technique.The results show that RF sputtering power Ni-Mn-Ga film composition and morphology are significantly affected.Ni content increases with the sputtering power is first increased and then decreased.Mn content is decreased and then increased the trend.Ga content almost linearly decreasing trend.The electron concentration(e/a)of the film changes little.Reference to the British National Physical Laboratory data on Ar gas sputtering yields for different elements of data,from the theoretical analysis the deviation of film composition. |
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| Keywords: | RF magnetron sputtering film composition film morphology valence electron concentration |
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