| 射频溅射Sn薄膜的工艺研究 |
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| 引用本文： | 蒙冕武,邓希敏,刘明登.射频溅射Sn薄膜的工艺研究[J].传感器与微系统,1999,18(1):7-9,12. |
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| 作者姓名： | 蒙冕武 邓希敏 刘明登 |
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| 作者单位： | 广西师范大学新技术新材料研究所,桂林,541004 |
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| 摘 要： | 采用正交试验方法研究了射频溅射的工艺因素对Ｓｎ膜形成过程的影响，得到了射频溅射制备Ｓｎ膜新工艺的最佳条件。Ｘ－射线衍射及ＳＥＭ实验结果表明在该工艺条件下得到的Ｓｎ膜为非常细小均匀的β－Ｓｎ的晶体结构。
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| 关 键 词： | 射频溅射 Sn膜 工艺 |
Research on the Technology of Thin Film of the RF-Sputtered Sn |
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| Meng Mianwu,Deng Ximin,Liu Mingdeng.Research on the Technology of Thin Film of the RF-Sputtered Sn[J].Transducer and Microsystem Technology,1999,18(1):7-9,12. |
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| Authors: | Meng Mianwu Deng Ximin Liu Mingdeng |
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| Abstract: | The effects of the technology factors such as sputtering power,sputtering time and sputtering pressure were investigated by means of orthogonal test method and the best technology on manufacturing the thin film of Sn. The X-ray and SEM experiments indicated that the thin film of Sn is tiny and uniform β-Sn crystal structure by use of this new technology . |
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| Keywords: | RF Sputtering Thin film of Sn Technology |
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