| 采用MEMS制作新型硅磁敏三极管特性研究 |
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| 引用本文： | 赵晓锋,田凤军,温殿忠.采用MEMS制作新型硅磁敏三极管特性研究[J].传感器与微系统,2004,23(9):86-88. |
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| 作者姓名： | 赵晓锋 田凤军 温殿忠 |
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| 作者单位： | 黑龙江大学,电子工程学院,黑龙江,哈尔滨,150080 |
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| 摘 要： | 给出采用MEMS技术在硅片表面制作矩形板状立体结构新型硅磁敏三极管的基本结构及灵敏度特性、电压-电流特性、磁电特性和温度特性,对新型硅磁敏三极管样品基本特性进行研究的结果表明:该新型硅磁敏三极管的集电极电流相对磁灵敏度较高,最大可达227%/T,具有负温度系数且温度系数较小。同时,给出影响新型硅磁敏三极管特性的基本因素。
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| 关 键 词： | 硅磁敏三极管 MEMS技术 磁灵敏度 |
| 文章编号： | 1000-9787(2004)09-0086-03 |
| 修稿时间： | 2004年3月20日 |
Characteristic research of new type silicon magneto transistor manufactured by MEMS techniques |
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| ZHAO Xiao-feng,TIAN Feng-jun,WEN Dian-zhong.Characteristic research of new type silicon magneto transistor manufactured by MEMS techniques[J].Transducer and Microsystem Technology,2004,23(9):86-88. |
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| Authors: | ZHAO Xiao-feng TIAN Feng-jun WEN Dian-zhong |
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| Abstract: | A basic structure about manufacturing a new type silicon magneto transistor with rectangle-plank cubic construction on silicon surface with MEMS technique is shown.Sensitivity,I-V,magnetoelectric and temperature characteristics can also be got.On the resultant of the research,the high magnetic-sensitivity of Ic that maximum can reach 227 %/T and the small negative temperature coefficient can be attained.Meanwhile,basic factors about affecting new type silicon magneto transistor characteristic are also shown. |
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| Keywords: | silicon magneto transistor MEMS techniques magnetic-sensitivity |
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