| 硅-玻璃静电键合中的电流-时间特性分析 |
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| 引用本文： | 董欣,吴苗,邹德恕,史衍丽,邓军,杜金玉,高国,沈光地.硅-玻璃静电键合中的电流-时间特性分析[J].传感器与微系统,2001,20(3):48-50,53. |
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| 作者姓名： | 董欣 吴苗 邹德恕 史衍丽 邓军 杜金玉 高国 沈光地 |
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| 作者单位： | 北京工业大学 北京光电子技术实验室, |
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| 基金项目： | 国家自然科学基金资助（69976004）和北京自然科学基金（4982005） |
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| 摘 要： | 在微传感器和微机械结构的静电键合实验中 ,当加电压到键合片对上时 ,外电路的电流迅速上升到一定值后 ,不是逐渐减小 ,而是较缓慢的继续上升 ,或在某一值停留一段时间再逐渐减小到最小值。通过对实验现象的分析 ,认为键合的电流 -时间特性主要是下述两个过程的综合反映 ,键合过程中接触电阻的减小引起的电流增大和空间电荷区形成引起的电流减小 ,正是由于这两个主要因素导致了上述现象的存在
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| 关 键 词： | 静电键合 电流-时间特性 微机械 |
| 文章编号： | 1000-9787(2001)03-0048-03 |
Analysis of current-time characteristic in silicon-glass anodic bonding |
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| DONG Xin,WU Jun-miao,ZOU De-shu,SHI Yan-li,DENG Jun,DU Jin-yu,GAO Guo,SHEN Guang-di.Analysis of current-time characteristic in silicon-glass anodic bonding[J].Transducer and Microsystem Technology,2001,20(3):48-50,53. |
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| Authors: | DONG Xin WU Jun-miao ZOU De-shu SHI Yan-li DENG Jun DU Jin-yu GAO Guo SHEN Guang-di |
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| Abstract: | In the anodic bonding experiment for the micro-sensors andmicro-mechanical structures，it is found that the external circuit current gradually increases at a slow speed or stays in a fixed value for a while ，after rising to the fixed value rapidly，and then decreases to a minimal value gradually.After analyzing the phenomenon, we believe that the characteristic of current-time is an integration of two factors：one is the current increase caused by the contact resistance decrease in anodic bonding, he other is the current decrease caused by the establishment of space charge region。These two factors lead to the above phenomenon. |
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| Keywords: | anodic bonding current-time characteristic micro-mechanical structures |
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