| 非晶态SiO_2掺杂Fe~（2＋）薄膜气敏特性的研究 |
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| 引用本文： | 陈康,耿殿丽.非晶态SiO_2掺杂Fe~（2＋）薄膜气敏特性的研究[J].传感器与微系统,1996(1):5-10. |
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| 作者姓名： | 陈康 耿殿丽 |
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| 作者单位： | 上海交通大学，杭州仪表元件厂 |
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| 摘 要： | 研制成功一种以ＳｉＯ２作为主体，掺杂Ｆｅ２＋离子薄膜制备的气敏元件，对ＣＯ气体有良好的气敏特性。它的线性范围为１．２×１０－４～８．９２×１０－３ｍｏｌ·ｄｍ－３，检测下限为５×１０－５ｍｏｌ·ｄｍ－３３，响应速度≤５ｓ．本工作以非晶态半导体的Ｍｏｔｔ－Ｄａｖｉｓ能带模型结合表面吸附理论，初步探讨了该材料的气敏机理，确立了元件阻值Ｒ与吸附浓度Ｃ的关系方程，以此解释元件的气敏特性．该方程对非晶态ＳｉＯ２掺杂薄膜是普遍适用的。
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| 关 键 词： | 氧化物半导体传感器 非晶态SiO_2 掺杂Fe~（2＋） 离子薄膜 气敏特性 |
Study on the Gas-sensitive Speciality of the Noncrystaline SiO_2 Doped with Fe￣(2+) |
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| Chen Kang,Wang Zhicheng,Geng Dianli.Study on the Gas-sensitive Speciality of the Noncrystaline SiO_2 Doped with Fe￣(2+)[J].Transducer and Microsystem Technology,1996(1):5-10. |
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| Authors: | Chen Kang Wang Zhicheng Geng Dianli |
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| Affiliation: | Chen Kang;Wang Zhicheng;Geng Dianli (Shanghai Jiaotong University)(Hangzhou Instrument Element Factory) |
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| Abstract: | SiO2 is used as the main body of the thin film and doped with Fe2+. It has high responsibility to the change of CO. The linearity of response is within the range of 1.2×10-4 -- 8.92×10-3 mol·dm-3. The detection limit is 5 ×10-5mol·dm-3. And the response time is no more than 5 s. In this work, the Mott-Davis Energy Band Model and the theory of surface adsorbtion is used to explain the work machanism of this material.And a equation of the resistance R and the adsorb density of CO is got. This equation is universally suitable for non-crystalline SiO2 doped thin film. |
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| Keywords: | Oxide-semiconductor sensor Non-crystalline SiO_2 Thin film doped with Fe￣(2+) Gas-sensitive speciality |
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