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CVD淀积SiC薄膜SiH4,CH4的分解反应的计算机模拟研究
引用本文:张洪涛,许辉.CVD淀积SiC薄膜SiH4,CH4的分解反应的计算机模拟研究[J].计算机与现代化,2000(3):21-25,40.
作者姓名:张洪涛  许辉
摘    要:采用化学气相淀积淀积SiC薄膜中SiH4、CH4的分解产物种属进行数学建模,并结合相关热力学数据进行计算机模拟,得出SiH4分解产物中以SiH2为最多,CH4以CH2为最多,表明它们在淀积薄膜中是主要因素。

关 键 词:化学气相淀积  SiC薄膜  SiH4  CH4  计算机模拟

Computing Simulation of Decomposition of SIH_4 and CH_4 in SiC Films
ZHANG Hong tao,XU Hui,XU Zhong yang,ZOU Xue cheng,WANG Chang an,ZHAO Bo fang,ZHOU Xue mei.Computing Simulation of Decomposition of SIH_4 and CH_4 in SiC Films[J].Computer and Modernization,2000(3):21-25,40.
Authors:ZHANG Hong tao  XU Hui  XU Zhong yang  ZOU Xue cheng  WANG Chang an  ZHAO Bo fang  ZHOU Xue mei
Abstract:The decomposing mechanism of SiH 4 and CH 4 in nc SiC film by CVD was discussed.After the reaction equations were determined by collecting previous chemical data, the computing simulation was carried out. The results show that the SiH 2 and CH 2 are main factors in deposition of nc SiC films.
Keywords:computing simulation  chemical vapor deposition  decomposing reaction  nc-SiC film  
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