| Abstract: | A compact lumped‐element equivalent circuit model of two‐layer integrated spiral inductors on silicon substrates is developed in this article. Based on this proposed model, excellent agreements are achieved between the measured and simulated S‐parameters for different inductors. Also, both self‐ and mutual inductances of two‐layer inductors are accurately extracted, and their overall performances are understood clearly. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 148–153, 2003. |
