Thermal stability and annealing behavior of photoluminescence from Eu doped YAG |
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| Affiliation: | 1. Graduated School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan;2. Faculty of Science and Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan;1. Department of Physics, Presidency College, Chennai, India;2. Department of Physics, P.B. College of Engineering, Chennai, India;3. Department of Physics, Rajalakshmi Institute of Technology, Chennai, India;1. Université de Lyon, CNRS, France;2. MATEIS, Insa-Lyon, CNRS UMR5510, F-69621 Villeurbanne, France;3. Laboratoire des Matériaux Non Métalliques, IOMP, Université Ferhat Abbas, Sétif 19000, Algeria;1. Nanostructured Materials Lab., Advanced Material Department, Central Metallurgical R&D Institute (CMRDI), P.O. Box 78 Helwan, 11421 Cairo, Egypt;2. Electrochemical and Chemical Treatment Lab., Minerals Department, Central Metallurgical R&D Institute (CMRDI), P.O. Box 78 Helwan, 11421 Cairo, Egypt;1. Institute of Scientific Instruments of the ASCR, Královopolská 147, 61264 Brno, Czech Republic;2. CRYTUR Ltd., Palackého 175, 51101 Turnov, Czech Republic;1. Hacettepe University, Department of Physics Engineering, 06800 Beytepe, Ankara, Turkey;2. Kafkas University, Faculty of Arts and Sciences, Department of Physics, 36100 Kars, Turkey;1. Laboratory of Crystal Physics, Kirensky Institute of Physics, SB RAS, Akademgorodok, Krasnoyarsk 660036, Russia;2. Laboratory of Coherent Optics, Kirensky Institute of Physics, SB RAS, Akademgorodok, Krasnoyarsk 660036, Russia;3. Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia;4. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia;5. Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Russia;6. Novosibirsk State University, Novosibirsk 630090, Russia |
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| Abstract: | Eu2O3 doped Y3Al5O12 (YAG) crystals have been grown using a floating zone technique and evaluated thermal stability and annealing behavior of PL for a fluorescence thermo-sensor application. Color of the crystals grown varies from deep purple to colorless with O2 concentration of the growth atmosphere and annealing in air. Photoluminescence (PL) peaking at λ = 590, 607, 624, 647 and 709 nm due to Eu3+ ions are observed from the crystals under UV excitation. Anomalous temperature dependence of PL intensity, which is observed in as-grown crystals, is improved greatly by annealing through the heat cycle. From annealing behavior of optical absorption spectra, residual Eu2+ ions are suggested to be responsible for the de-coloration and the improvement of anomalous temperature dependence of Eu doped YAG crystals. |
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| Keywords: | Eu doped YAG Photoluminescence spectrum Annealing Optical absorption spectrum Fluorescence thermometer |
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