Optimization of an ultra low-phase noise sapphire--SiGe HBT oscillator using nonlinear CAD |
| |
Authors: | Cibiel Gilles Régis Myrianne Llopis Olivier Rennane Abdelali Bary Laurent Plana Robert Kersalé Yann Giordano Vincent |
| |
Affiliation: | Lab. of Anal. & Archit. of Syst., Nat. Center of Sci. Res., Toulouse, France; |
| |
Abstract: | In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded Q/sub L/ factor of 75,000. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|