抗电子发射钼栅极的性能分析

利用真空离子沉积技术在钼栅极的表面分别镀上一层Ｃ膜Ａｌ膜ＡｌＴｌＺｒ合金膜，对镀膜后的样品进行寿命试验。用ＳＥＭ和ＸＲＤ分析技术镀膜样品受了阴极活性蒸发物Ｂａ污染前，污染后进行了对比研究，实验结果表明，逸出功较低的Ａｌ在受取Ｂａ污染后，能够生成金属间化合物，从而能够有效地抑制栅极发射，而沉积的Ｃ膜在受到污染后，逐渐被消耗而失去作用；在Ａｌ中加逸出功较高的ＴｉＺｒ合金后，破坏了金属间化合物的生成，并

Characteristics of Electron Emission Resistant Mo-Grid

C film,Al film and AlTiZr alloy film were coated on the surfaces of molybdenumgrids by vacuum ion deposition technology.Lifespan tests of modified Mogrid were carried out.The SEM and XRD analysis were performed on these modified Mogrids before and after they were contaminated by active electronemissive substance Ba of the cathode.The experimental results showed that the low work funciton element Al formed intermetallic compounds after the grid was contaminated by electronemissive substance Ba of the cathode,and restrained effectually electron emission of grid.The high work function element C was gradually consumed after it was contaminated,and then lost its nature.The high work function alloy adding into Al did not bate the emitting performance of grid,because intermetallic compound could not be formed.The experimental results suggest that a layer of Al thin film can be selected as coating materials of Mogrid.When the active electronemissive substance of cathode reacted with Al and created the intermetallic compounds during the Mogrid work process,it can depress electron emission of Mogrid.This can be a good idea to develop new coating materials of grid.