| SiH4射频放电功率耗散机制的光发射研究 |
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| 引用本文： | 石旺舟,黄翀,姚若河,林揆训,林璇英.SiH4射频放电功率耗散机制的光发射研究[J].功能材料,2000,31(2):144-145. |
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| 作者姓名： | 石旺舟 黄翀 姚若河 林揆训 林璇英 |
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| 作者单位： | 汕头大学非晶半导体实验室,广东 汕头515063 |
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| 基金项目： | 广东省博士启动基金,苏州大学校科研和教改项目,,,, |
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| 摘 要： | 采用ＯＭＡ－４０００测量了ＳｉＨ４射频辉光放电等离子体的光发射谱,研究了其谱线强度随放电射频功率和反应气体流量间的变化关系。发现在放电射频功率增加和反应气体流量升高的过程中,其等离子体状态分析发生性质不同的转变,这种转变联系到射叔功率耗散机制的变化。当反应气体流量增加时,电子获得能量的机制由阴极暗区加速转变为等离子体内电场的加热效应,而在放电功能升高的过程中,离子轰击阴极产生二次电子发射效应导致了
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| 关 键 词： | SiH4 射频辉光放电 功率耗散 光发射谱 |
| 文章编号： | 1001－9731(2000)02－0144－02 |
| 修稿时间： | 1998－11－08 |
Study of Power Dissipation Mechanism of SiH4 RF Glow Discharge by Optical Emission Spectroscopy |
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| SHI Wangzhou,HUANG Chong,YAO Ruohe,LIN Kuixun,LIN Xuanying.Study of Power Dissipation Mechanism of SiH4 RF Glow Discharge by Optical Emission Spectroscopy[J].Journal of Functional Materials,2000,31(2):144-145. |
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| Authors: | SHI Wangzhou HUANG Chong YAO Ruohe LIN Kuixun LIN Xuanying |
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| Affiliation: | SHI Wangzhou
,HUANG Chong
,YAO Ruohe
,LIN Kuixun
,LIN Xuanying
(Laboratory of Amorphous Semiconductor,Shantou University,Shantou,515063,China) |
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| Abstract: | Optical emissiom spectra of SiH 4 rf glow discharge were measured by OMA-4000.Influence of rf power and gas flow rate on the emission intensity was investigated.It was found that different transitions which were related with the electrical power dissipation took place in the course of increase in rf power and gas flow rate respectively.When gas flow rate increases to a certain value,the "Joule heating" mechanism by which electrons gain energy occures in the plasma bulk.While rf power increases to a certain value,the secondary electrons generated by positive ions bombarding cathode lead to the enhance of plasma optical emission. |
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| Keywords: | SiH4 rf glow discharge power dissipation optical emission spectra |
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