| 用射频磁控溅射法制备的Zn1-xMgxO薄膜光致发光特性 |
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| 引用本文： | 许小亮,王燎原,王烨,杨智超,施朝淑.用射频磁控溅射法制备的Zn1-xMgxO薄膜光致发光特性[J].功能材料,2006,37(2):319-321. |
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| 作者姓名： | 许小亮 王燎原 王烨 杨智超 施朝淑 |
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| 作者单位： | 1. 中国科学院中国科学技术大学,结构分析实验室,安徽,合肥,230026;中国科学技术大学,物理系,安徽,合肥,230026
2. 中国科学院中国科学技术大学,结构分析实验室,安徽,合肥,230026 |
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| 基金项目： | The project is supported by National Natural Science Foundation （50472008）; Anhui Scientist Foundation （2003Z021,04022001 ）. |
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| 摘 要： | 用射频磁控溅射法在Si(100)衬底上生长了一组Zn1-xMgxO(x=0～0.16)薄膜.并在不同温度下退火.对薄膜的光致发光研究表明,在薄膜的发射谱的紫外区域有分别对应自由激子(以及相应的声子伴线)和电子-空穴等离子体的发光机制,其中后者有5倍超线性的受激发射,其受激发射阈值与薄膜的退火温度相关,样品中最低受激阈值为40kW/cm2.
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| 关 键 词： | ZnMgO 光致发光 受激发射阈值 ZnMgO photoluminescence lasing threshold |
| 文章编号： | 1001-9731(2006)02-0319-03 |
| 收稿时间： | 2005-03-29 |
| 修稿时间： | 2005-12-06 |
Photoluminescence property of Zn1-xMgxO films grown by RF magnetron sputtering |
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| XU Xiao-liang,WANg Liao-yuan,WANG Ye,YANG Zhi-chao,SHI Chao-shu.Photoluminescence property of Zn1-xMgxO films grown by RF magnetron sputtering[J].Journal of Functional Materials,2006,37(2):319-321. |
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| Authors: | XU Xiao-liang WANg Liao-yuan WANG Ye YANG Zhi-chao SHI Chao-shu |
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| Affiliation: | 1. Structure Research Laboratory, University of Science and Technology of China, Chinese Academy of Sciences, Hefei 230026 ,China; 2. Department of Physics, University of Science and Technology of China, Hefei 230026, China |
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| Abstract: | A series Zn1-xMgxO (x=0～0.16) films grown on Si(100) substrate were prepared by RF magnetron sputtering and annealed at different temperature. The UV emission peaks of free exciton (and assisted phonon replicas) and electron-hole plasma (E-H) were found in the photoluminescence (PL) from the Zn1-xMgxO films, where the E-H has a five-time super-linear enhanced lasing effect. The blue shift of the UV peaks in the photoluminescence spectra is found to be associated with increasing Mg content in Zn1-x Mgx O films, and the peaks intensity is also reinforced significantly as increasing the annealing temperature.The minimum lasing threshold of the samples is 40kW/cm2. |
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| Keywords: | ZnMgO photoluminescence lasing threshold |
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