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Sol-Gel法制备低阻SnO2薄膜
引用本文:李爱武,全宝富,刘凤敏,陈丽华.Sol-Gel法制备低阻SnO2薄膜[J].功能材料,2001,32(6):645-646,648.
作者姓名:李爱武  全宝富  刘凤敏  陈丽华
作者单位:吉林大学电子工程系,
基金项目:国家自然科学基金资助项目(69774027)
摘    要:采用sol-gel法制备了SnO2薄膜。研究了不同的实验条件对薄膜阻值的影响。利用XRD、XPS分析了薄膜的晶体结构和晶粒尺寸。利用这种低阻SnO2薄膜制作的热线型气敏元件对H2S具有较好的气敏特性。

关 键 词:sol-gel法  气敏特性  二氧化锡薄膜  气敏材料
文章编号:1001-9731(2001)06-0645-02

Preparation of low resistance SnO2 thin film by sol-gel method
LI Ai wu,QUAN Bao fu,LIU Feng min,CHEH Li hua.Preparation of low resistance SnO2 thin film by sol-gel method[J].Journal of Functional Materials,2001,32(6):645-646,648.
Authors:LI Ai wu  QUAN Bao fu  LIU Feng min  CHEH Li hua
Abstract:The SnO 2 thin film of low resistant was prepared by sol gel method. The relation between the prepared condition and the resistance of the thin film has been studied. XRD and XPS were employed to investigate the structure and micrography of SnO 2 thin film. The direct heat gas sensor prepared with SnO 2 thin film is sensitive for H 2S gas.
Keywords:sol  gel Method  SnO  2 thin film  gas sensitive properties
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