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Sol-Gel法制备低阻In2 O3薄膜
引用本文:全宝富,刘凤敏,李爱武,陈丽华. Sol-Gel法制备低阻In2 O3薄膜[J]. 功能材料, 2001, 32(4): 407-409
作者姓名:全宝富  刘凤敏  李爱武  陈丽华
作者单位:吉林大学电子工程系,
基金项目:国家自然科学基金资助项目(69774027)
摘    要:采用sol-gel法制备In2O3薄膜材料,研究了不同制备条件对薄膜电阻的影响;分别用XPS、XRD方法对材料进行了分析,确定了其结构和组成,并用此薄膜材料制作了直热式气敏元件,发现它对乙醇、丁烷气体具有较高的灵敏度。

关 键 词:气敏特性 溶胶-凝胶法 氧化铟薄膜 制备
文章编号:1001-9731(2001)04-0407-03

Preparation of low resistance In2O3 thin film by sol-gel method Optical characterization of manganese-doped zinc sulfide nanoparticles synthesized in microemulsion
QUAN Bao fu,LIU Feng min,LI Ai wu,CHEN Li hua. Preparation of low resistance In2O3 thin film by sol-gel method Optical characterization of manganese-doped zinc sulfide nanoparticles synthesized in microemulsion[J]. Journal of Functional Materials, 2001, 32(4): 407-409
Authors:QUAN Bao fu  LIU Feng min  LI Ai wu  CHEN Li hua
Abstract:In 2O 3 thin film is prepared by sol gel technology. We analyzed the relation between the prepared conditions and the resistance of the thin film. The thin film was researched by XPS,XRD, so we got the structure and composition of the thin film, and direct heat gas sensor was fabricated with this thin film. It has good sensitivity to C 2H 2OH.
Keywords:sol gel method  In 2O 3 thin film  gas sensitive properties  
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