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ITO薄膜的制备以及性能的研究
引用本文:董科研,周明,王静静,吴小麟,高传玉.ITO薄膜的制备以及性能的研究[J].功能材料,2011(Z2).
作者姓名:董科研  周明  王静静  吴小麟  高传玉
作者单位:江苏大学江苏省光子制造科学技术重点实验室;
基金项目:国家自然科学基金资助项目(50975129); 江苏省科技支撑计划资助项目(BE2008110)
摘    要:在室温条件下通过直流磁控溅射法在普通玻璃基体上制备了光电性能优良的ITO薄膜。靶材为ITO陶瓷靶,其中In2O3与SnO2的质量比为9∶1。运用UV-2550紫外可见光光度计测量样品的透光率,采用SZT-2四探针测试仪测量样品表面的电阻率,用扫描电镜(SEM)对样品进行表征。研究了溅射压强、溅射功率等参数对薄膜光电性能的影响。研究表明,ITO薄膜的电阻率随着溅射功率的增大而减小,在溅射功率为110W时ITO薄膜的透光率有相对好的数值。溅射压强为1.0Pa时既能保持ITO薄膜低的电阻率又能保证高的透光率。

关 键 词:ITO  透光率  电阻率  直流磁控溅射  

Production and properties of ITO transparent conductive film glass
DONG Ke-yan,ZHOU Ming,WANG Jing-jing,WU Xiao-lin,GAO Chuan-yu.Production and properties of ITO transparent conductive film glass[J].Journal of Functional Materials,2011(Z2).
Authors:DONG Ke-yan  ZHOU Ming  WANG Jing-jing  WU Xiao-lin  GAO Chuan-yu
Affiliation:DONG Ke-yan,ZHOU Ming,WANG Jing-jing,WU Xiao-lin,GAO Chuan-yu (Center for Photon Manufacturing Science and Technology,Jiangsu University,Zhenjiang 212013,China)
Abstract:The indium tin oxide(ITO) thin films were prepared on glass substrates by DC magnetron sputtering process at room temperature,using an ITO target with a combination of 90% In2O3 and 10% SnO2in mass fraction.The crystal structure and surface shape of the film are analyzed by SEM,the light transmittance and resistance are measured by UV-2550 and SZT-2.The influences of sputtering pressure and sputtering power on the electrical and optical properties of as-deposited ITO thin films were investigated.The result ...
Keywords:ITO  light transmittance  resistivity  DC magnetron sputtering  
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