| 磁控溅射制备TiN薄膜影响因素的研究 |
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| 引用本文： | 胡敏,刘莹,赖珍荃,刘倩.磁控溅射制备TiN薄膜影响因素的研究[J].功能材料,2009,40(9). |
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| 作者姓名： | 胡敏 刘莹 赖珍荃 刘倩 |
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| 作者单位： | 1. 南昌大学,机电工程学院,江西,南昌,330031
2. 南昌大学,物理系,江西,南昌,330031 |
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| 基金项目： | 国家自然科学基金重点资助项目(50730007) |
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| 摘 要： | 采用磁控溅射法在硅基片表面沉积TiN薄膜,研究了溅射气压、氮气流量、氩气流量、溅射电流等溅射参数对TiN薄膜导电性能的影响.实验参数采用正交设计法选取,经模糊分析得出,所考察的因素对薄膜光催化性能的影响次序由大到小依次为溅射电流、气体流量、溅射气压.进一步研究影响最大的溅射电流对薄膜结构与电学性能的影响,结果发现:溅射电流的增大使溅射粒子的动能随之增大,薄膜生长加快;薄膜的电阻率存在最小值.
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| 关 键 词： | 磁控溅射 TiN薄膜 正交试验 溅射电流 |
The influence of TiN thin flms grown processing by magnetron sputtering |
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| HU Min
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LIU Ying
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LAI Zhen-quan
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LIU Qian.The influence of TiN thin flms grown processing by magnetron sputtering[J].Journal of Functional Materials,2009,40(9). |
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| Authors: | HU Min LIU Ying LAI Zhen-quan LIU Qian |
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| Affiliation: | 1.School of Mechanical and Electrical Engineering;Nanchang University;Nanchang 330031;China;2.Department of Physics;China |
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| Abstract: | Titanium nitride(TiN) thin films prepared on Si substrates by DC reactive magnetron sputtering was optimized with orthogonal experimental method.The results of the fuzzy analysis show that the influence sequence of TiN thin film is deposition current,Ar flow,N2 flow and deposition pressure.The influence of deposition current on the technological parameters and electrical property of TiN thin films were investigated.It is shown that when the deposition current increased,the kinetic energy of the particle wer... |
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| Keywords: | orthogonal experiments magnetron sputtering TiN thin films deposition current |
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