| 钛酸锶钡薄膜C-V曲线不对称现象研究 |
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| 引用本文： | 胡立业,杨传仁,符春林,陈宏伟.钛酸锶钡薄膜C-V曲线不对称现象研究[J].功能材料,2005,36(11):1704-1705,1708. |
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| 作者姓名： | 胡立业 杨传仁 符春林 陈宏伟 |
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| 作者单位： | 电子科技大学,微电子与固体电子学院,四川,成都,610054 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)项目对本课题的大力支持! |
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| 摘 要： | 采用射频（RF）磁控溅射在Pt／Ti／SiO2／Si（100）衬底上制备了Ba0.6Sr0.4TiO3（BST）薄膜。通过研究BST薄膜的电容-偏压（C-V）特性曲线发现，溅射过程中的离子注入引起底电极／铁电薄膜界面处产生了过渡层，从而导致C-V曲线不对称。最后我们通过改进溅射工艺对这一机理进行了实验验证。
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| 关 键 词： | 钛酸锶钡 薄膜 C-V曲线 不对称 界面 |
| 文章编号： | 1001-9731（2005）11-1704-02 |
| 收稿时间： | 2005-03-15 |
| 修稿时间： | 2005-03-152005-08-11 |
The asymmetry of C-V curves of BaxSr1-xTiO3 thin films |
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| HU Li-ye,YANG Chuan-ren,FU Chun-lin,CHEN Hong-wei.The asymmetry of C-V curves of BaxSr1-xTiO3 thin films[J].Journal of Functional Materials,2005,36(11):1704-1705,1708. |
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| Authors: | HU Li-ye YANG Chuan-ren FU Chun-lin CHEN Hong-wei |
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| Abstract: | Ba_(0.6)Sr_(0.4)TiO_3 thin films were prepared by RF magnetron sputtering system on Pt/Ti/SiO_2/Si(100)substrates.It is found that the asymmetry of the C-V curves was due to the transition layers(between Pt bottom electrode and Ba_(0.6)Sr_(0.4)TiO_3 thin film) caused by the ion implantation during sputtering process.Moreover,this mechanism was validated by our experimental results. |
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| Keywords: | barium strontium titanate thin film C-V curve asymmetry interface |
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