| 磁控溅射制备硅铝阻隔膜的研究 |
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| 引用本文： | 霍纯青,陈强,孙运金,岳蕾,张跃飞,刘福平.磁控溅射制备硅铝阻隔膜的研究[J].包装工程,2007,28(8):40-42. |
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| 作者姓名： | 霍纯青 陈强 孙运金 岳蕾 张跃飞 刘福平 |
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| 作者单位： | 北京印刷学院印刷包装材料与技术北京市重点实验室,北京,102600 |
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| 摘 要： | 采用磁控溅射技术以10%Si～90%Al合金为靶材,通入O2将Si氧化成SiO2,Al氧化成Al2O3,在普通PET薄膜表面制备具有高阻隔性无机阻隔薄膜层,以增加其阻隔性.传统的磁控溅射法制备SiO2膜工艺,大多采用射频溅射法,但其成本较高,效率较低,无法充分满足大面积工业化镀膜生产的需要.而采用10%Si～90%Al合金不仅可以实现直流溅射工艺,而且测量结果表明,薄膜的阻隔性得到大幅度提高.
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| 关 键 词： | 直流反应磁控溅射 SiO2-Al2O3薄膜 阻隔性 |
| 文章编号： | 1001-3563（2007）08-0040-03 |
| 修稿时间： | 2007-07-20 |
Study of DC Magnetron Sputtering Si-Al Alloy for High Barrier Films |
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| HUO Chun-qing,CHEN Qiang,SUN Yun-jin,YUE Lei,ZHANG Yue-fei,LIU Fu-ping.Study of DC Magnetron Sputtering Si-Al Alloy for High Barrier Films[J].Packaging Engineering,2007,28(8):40-42. |
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| Authors: | HUO Chun-qing CHEN Qiang SUN Yun-jin YUE Lei ZHANG Yue-fei LIU Fu-ping |
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| Affiliation: | Beijing Institute of Graphic Communication, Beijing 102600, China |
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| Abstract: | The DC magnetron sputtering method was adopted to sputter a Si-Al alloy target for high barrier properties of SiO2-Al2 O3 layer on PET surface. It is well known that for preparing inorganic SiO2 layer RF magnetron sputtering shall be employed in general. But a long deposition period and low efficacy makes it impossible for coating in large films and industrialized application due to economical reason. With Si-Al alloy target it now becomes possible for high barrier properties in PET film in DC sputtering based on the results obtained in our experiments. |
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| Keywords: | the DC magnetron sputtering SiO2-Al2O3 film barrier properties |
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