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Oxidation behaviors of(Hf0.25Zr0.25Ta0.25Nb0.25)C and(Hf0.25Zr0.25Ta0.25Nb0.25)C-SiC at 1300-1500℃
作者姓名:Haoxuan Wang  Shouye Wang  Yejie Cao  Wen Liu  Yiguang Wang
作者单位:Science and Technology on Thermostructural Composite Materials Laboratory,Northwestern Polytechnical University,Xi'an,Shaanxi 710072,PR China;Science and Technology on Thermostructural Composite Materials Laboratory,Northwestern Polytechnical University,Xi'an,Shaanxi 710072,PR China;Science and Technology on Thermostructural Composite Materials Laboratory,Northwestern Polytechnical University,Xi'an,Shaanxi 710072,PR China;School of Materials Science and Engineering,Zhengzhou University,Zhengzhou,Henan 450052,PR China;Institute of Advanced Structure Technology,Beijing Institute of Technology,Haidian District 100081,Beijing,PR China
基金项目:This work was financially supported by the National Natural Sci-ence Foundation of China
摘    要:In this work,high-entropy ceramics(Hf0.25 Zr0.25Ta0.25Nb0.25)C(HZTNC) and HZTNC doped with 20 vol%SiC(HZTNC-SiC) were fabricated by spark plasma sintering.Their oxidation behavior was investigated over the temperature range of 1300-1500℃ for up to 60 min.Both HZTNC and HZTNC-SiC exhibited good oxidation resistance,and their weight change as a function of oxidation time obeyed a parabolic law.Through XRD,microstructure observation,and elemental mapping analysis of the oxide layers,it was found that the formation of Nb2 Zr6 O17,Hf6 Ta2 O17,and(Ta,Nb)2 O5 mixed-oxide layers effectively protected the matrix from further oxidation.Microcracks began to appear on the oxide layer of HZTNC at high temperatures after 60 min of oxidation.However,the addition of SiC in HZTNC suppressed these microcracks at high temperatures due to the active oxidation of SiC.Compared with the oxides formed on HZTNC,the additional formation of Hf(Zr)SiO4 on HZTNC-SiC could further improve its oxidation resistance over HZTNC ceramics.

关 键 词:High-entropy  carbide  Oxidation  resistance  Oxidation  mechanism

Oxidation behaviors of (Hf0.25Zr0.25Ta0.25Nb0.25)C and (Hf0.25Zr0.25Ta0.25Nb0.25)C-SiC at 1300-1500 ℃
Haoxuan Wang,Shouye Wang,Yejie Cao,Wen Liu,Yiguang Wang.Oxidation behaviors of (Hf0.25Zr0.25Ta0.25Nb0.25)C and (Hf0.25Zr0.25Ta0.25Nb0.25)C-SiC at 1300-1500 ℃[J].Journal of Materials Science & Technology,2021,60(1):147-155.
Authors:Haoxuan Wang  Shouye Wang  Yejie Cao  Wen Liu  Yiguang Wang
Abstract:In this work, high-entropy ceramics (Hf0.25 Zr0.25Ta0.25Nb0.25)C (HZTNC) and HZTNC doped with 20 vol%SiC (HZTNC-SiC) were fabricated by spark plasma sintering. Their oxidation behavior was investigated over the temperature range of 1300-1500 ℃ for up to 60 min. Both HZTNC and HZTNC-SiC exhibited good oxidation resistance, and their weight change as a function of oxidation time obeyed a parabolic law. Through XRD, microstructure observation, and elemental mapping analysis of the oxide layers, it was found that the formation of Nb2Zr6O17, Hf6Ta2O17, and (Ta, Nb)2O5 mixed-oxide layers effectively protected the matrix from further oxidation. Microcracks began to appear on the oxide layer of HZTNC at high temperatures after 60 min of oxidation. However, the addition of SiC in HZTNC suppressed these microcracks at high temperatures due to the active oxidation of SiC. Compared with the oxides formed on HZTNC, the additional formation of Hf(Zr)SiO4 on HZTNC-SiC could further improve its oxidation resistance over HZTNC ceramics.
Keywords:High-entropy carbide  Oxidation resistance  Oxidation mechanism
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