Sb掺杂对ZnO-V2O5多元系压敏电阻的影响

本文研究了V/Sb预合成粉、SbVO4和Sb2O3等三种不同形式的Sb掺杂对ZnO-V2O5基压敏陶瓷结构和性能的影响.化学计量比不变情况下,上述Sb掺杂方式的改变,使烧结过程中Sb3 离子在陶瓷样品中的浓度上升,促进Zn7Sb2O12型尖晶石相形成,材料晶粒随之细化.同时材料的压敏电压出现大幅上升,而非线性系数和漏电流密度受Sb掺杂形式的变化影响不大.Sb以V/Sb预合成粉进行掺杂可以获得较大尺寸的晶粒,有利于材料在低压方面的应用.

Effects of Antimony Dopants on the ZnO-V2O5 Multicomponent Varistor Ceramics

The microstructure and properties of three groups of multicomponent ZnO-V_2O_5 varistor ceramics were studied as a function of antimony dopant changing from the pre-synthesized V/Sb powder to SbVO_4 and then to Sb_2O_3.While remaining the stoichiometric ratios stable,the concentration of Sb~(3+) cation within the ceramic is increased with the antimony doping form variations.As a result,spinel formation in the ceramics was increased,while the average grain size of the ceramics was decrease accordingly.The breakdown voltages of the ceramic are increased dramatically,while other I-V characteristics,such as nonlinearity(exponent) and leak current density of the as studied ceramic remain rather constantly.The pre-synthesized V/Sb powder is the most effective antimony dopant in term of its effects on the grain growth of the ceramics.The ceramic is promising material in fabrication of low voltage chip varistor.