| Abstract: | Laser ablation of a gallium arsenide (GaAs) wafer immersed in distilled water was carried out using the fundamental wavelength of a high frequency Nd:YAG laser with 240?ns pulse duration. Rate of nanoparticles generation through laser ablation for various amounts of laser pulse energies (0.4–0.94?mJ) and repetition rates (400–2000?Hz) were studied and a maximum ablation rate of 19.6?µgr/s was obtained. Formation of the pure GaAs nanocrystals (NCs) is confirmed using TEM micrograph and X-ray diffraction analysis. Band-gap energy of generated GaAs NCs is calculated by Tauc method to be between 2.48 and 2.60?eV which is larger than the band-gap energy of bulk GaAs. The band-gap energy of NCs is increased by increasing the energy of laser pulses and is decreased by increasing the pulse repetition rate. |
