亚毫安室温连续工作InGaAs垂直腔面发射激光器

报道了ＩｎＧａＡｓ应变量子讲垂直腔面发射激光器（ＶＣＳＥＬ）的室温连续工作。在ＭＢＥ生长过程中利用红外高温仪测量了表观衬底热辐射振荡，实现了原位厚度监测；采用阶梯型分布布拉格反射器（ＤＢＲ）及腐蚀倒台面结构，降低了器件串联电阻。对于２×３μｍ２的台面结构ＶＣＳＥＬ，室温连续工作阈值电流一般为１．５ｍＡ，最低达到０．７ｍＡ，阈值电压为２．５伏，输出功率达到０．５ｍＷ，激射波长为０．９４ｕｍ，量子效率为１２％。

Sub-milliampere Room Temperture CW Operation of In GaAs Vertical Cavity Surface-emitting Lasers

We report room temperature CW operation of InGaAs/GaAs strained QW vertical cavity surface-emitting laser with threshold current less than l mA. Step-barrier p-type DBR was used to reduced the DBRseries resistance,which reduces the series resistance by 50 times.In situ growth thickness monitoring andcontrolling were realized by measuring the apparent heat emission oscillations in the whole growth process,and compared with the quasi-black body emission. The room temperature CW operation was obtained forwet etching reverse mesa structure, with the first l8 perieds p-BDR etched for further reducing seriesresistance and proton-implantation used for current confinement.