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Contact size-dependent switching instabilities in HfO2 RRAM |
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| Authors: | Baikov Pavel Ranganathan Kamalakannan Goldfarb Ilan Ruzin Arie |
| Affiliation: | 1.Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, 69978, Tel Aviv, Israel ;2.Department of Materials Science and Engineering, Faculty of Engineering, Tel-Aviv University, 69978, Tel Aviv, Israel ; |
| Abstract: | Journal of Materials Science: Materials in Electronics - A comprehensive understanding of the resistive switching mechanisms that activate REDOX-based random access memory devices is necessary to... |
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